Manufacturer Part Number
ZXMN4A06GTA
Manufacturer
Diodes Incorporated
Introduction
N-Channel Enhancement Mode MOSFET Transistor
Product Features and Performance
Drain-Source Voltage (Vds) up to 40V
Continuous Drain Current (Id) up to 5A at 25°C
Low On-Resistance (RDS(on)) of 50mΩ at 4.5A, 10V
Input Capacitance (Ciss) of 770pF at 40V
Power Dissipation (Pd) up to 2W at 25°C
Gate-Source Voltage (Vgs) up to ±20V
Threshold Voltage (Vgs(th)) of 1V at 250μA
Suitable for Switching and Amplifier Applications
Product Advantages
Compact Surface Mount Package (SOT-223-3)
High Current Handling Capability
Low On-Resistance for Efficient Power Conversion
Wide Operating Temperature Range (-55°C to 150°C)
Key Technical Parameters
Drain-Source Voltage (Vds): 40V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 5A at 25°C
On-Resistance (RDS(on)): 50mΩ at 4.5A, 10V
Input Capacitance (Ciss): 770pF at 40V
Power Dissipation (Pd): 2W at 25°C
Threshold Voltage (Vgs(th)): 1V at 250μA
Quality and Safety Features
RoHS3 Compliant
Designed and Manufactured by Diodes Incorporated
Compatibility
Suitable for Surface Mount Applications
Compatible with Various Electronic Circuits and Systems
Application Areas
Switching Power Supplies
Motor Drivers
Amplifiers
General Purpose Power Switching
Product Lifecycle
Current Product
No Discontinuation Plans
Replacements and Upgrades Available
Key Reasons to Choose This Product
High Current Handling Capability
Low On-Resistance for Efficient Power Conversion
Wide Operating Temperature Range
Compact Surface Mount Package
Robust Design and Reliability
RoHS3 Compliance for Environmental Friendliness
