ZXMN3A14FQTA - Diodes Incorporated

Manufacturer Part Number

ZXMN3A14FQTA

Manufacturer

Diodes Incorporated

Introduction

N-channel MOSFET transistor

Product Features and Performance

Automotive-grade, AEC-Q101 qualified

Wide operating temperature range: -55°C to 150°C

Low on-resistance: 65 mΩ @ 3.2 A, 10 V

High current capability: 3.9 A continuous drain current @ 25°C

Low input capacitance: 448 pF @ 15 V

Maximum power dissipation: 1.5 W

Product Advantages

Robust design for automotive and industrial applications

Efficient power management with low on-resistance

Compact SOT-23-3 package for space-constrained designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30 V

Gate-to-Source Voltage (Vgs): ±20 V

Threshold Voltage (Vgs(th)): 2.2 V @ 250 μA

Drive Voltage (Rds(on) max/min): 4.5 V / 10 V

Gate Charge (Qg): 8.6 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Manufactured in an IATF 16949 certified facility

Compatibility

Compatible with a wide range of automotive and industrial applications

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Motor control

Switching regulators

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from Diodes Incorporated.

Several Key Reasons to Choose This Product

Automotive-grade reliability and performance for demanding applications.

Efficient power management with low on-resistance for improved energy efficiency.

Compact SOT-23-3 package for space-constrained designs.

Wide operating temperature range for versatile deployment.

RoHS3 compliance for environmental responsibility.