Manufacturer Part Number
ZXMC3A16DN8TA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
N and P-Channel MOSFET Array
Product Features and Performance
30V Drain to Source Voltage (Vdss)
35mOhm Max On-Resistance (Rds(on)) at 9A, 10V
25W Max Power Dissipation
-55°C to 150°C Operating Temperature Range
796pF Max Input Capacitance (Ciss) at 25V
5nC Max Gate Charge (Qg) at 10V
Logic Level Gate (Vgs(th) Max 1V at 250μA)
Product Advantages
High performance MOSFET array in compact 8-SOIC package
Suited for power management, switching, and control applications
Efficient thermal management through surface mount design
Key Technical Parameters
N and P-Channel MOSFET Configuration
30V Drain to Source Voltage (Vdss)
9A/4.1A Continuous Drain Current (Id) at 25°C
35mOhm Max On-Resistance (Rds(on))
796pF Max Input Capacitance (Ciss)
5nC Max Gate Charge (Qg)
1V Max Threshold Voltage (Vgs(th))
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
Suitable for power management, switching, and control applications
Application Areas
Power management circuits
Switching circuits
Control applications
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
High performance MOSFET array in compact package
Efficient thermal management through surface mount design
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant for environmental safety
Ongoing product support and availability of replacements/upgrades