Manufacturer Part Number
ZXM61P03FTA
Manufacturer
Diodes Incorporated
Introduction
Single P-channel MOSFET transistor
Product Features and Performance
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 350mΩ max. @ 600mA, 10V
Continuous Drain Current (Id): 1.1A max. @ 25°C
Input Capacitance (Ciss): 140pF max. @ 25V
Power Dissipation (Pd): 625mW max. @ 25°C
Product Advantages
Low on-resistance for efficient power switching
High-speed switching capabilities
Small footprint in SOT-23-3 package
Key Technical Parameters
MOSFET Technology: P-Channel
Gate-to-Source Voltage (Vgs): ±20V max.
Threshold Voltage (Vgs(th)): 1V max. @ 250μA
Gate Charge (Qg): 4.8nC max. @ 10V
Quality and Safety Features
RoHS 3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Compatible with standard SMT assembly processes
Tape and reel packaging for automated placement
Application Areas
Power management circuits
Switching applications
General-purpose amplifier and switch
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose
Excellent power efficiency due to low on-resistance
Reliable and stable performance across wide temperature range
Compact and easy to integrate into space-constrained designs
Widely compatible with standard circuit design and manufacturing