Manufacturer Part Number
ZX5T955GTA
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT)
Suitable for a wide range of power supply and audio applications
Product Features and Performance
Power rating of 3 watts
Collector-emitter breakdown voltage of 140 volts
Collector current rating of 4 amps
Collector cutoff current of 20 nanoamps
Low collector-emitter saturation voltage of 360 millivolts
Current gain of at least 100 at 1 amp collector current
Transition frequency of 120 MHz
Product Advantages
Excellent power handling capability
High voltage and current ratings
Low saturation voltage for efficient operation
Wide temperature range of -55°C to 150°C
Key Technical Parameters
Collector-emitter breakdown voltage: 140 V
Collector current: 4 A
Collector cutoff current: 20 nA
Collector-emitter saturation voltage: 360 mV
Current gain: 100 (min)
Transition frequency: 120 MHz
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Can be used in a variety of power supply and audio circuits
Application Areas
Power supplies
Audio amplifiers
Industrial controls
Automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Exceptional power handling capability
High voltage and current ratings
Low saturation voltage for efficient operation
Wide operating temperature range
Compliance with RoHS3 standards
Suitable for surface mount applications
