Manufacturer Part Number
ZVP4525E6TA
Manufacturer
Diodes Incorporated
Introduction
P-Channel Enhancement-Mode Power MOSFET
Product Features and Performance
Drain to Source Voltage (Vdss): 250V
Vgs (Max): ±40V
On-Resistance (Rds(on)): 14Ω @ 200mA, 10V
Continuous Drain Current (Id): 197mA @ 25°C
Input Capacitance (Ciss): 73pF @ 25V
Power Dissipation: 1.1W
Product Advantages
High Voltage Capability
Low On-Resistance
Fast Switching Speed
High Reliability
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: P-Channel Enhancement-Mode
Threshold Voltage (Vgs(th)): 2V @ 1mA
Drive Voltage (Max Rds(on), Min Rds(on)): 3.5V, 10V
Gate Charge (Qg): 3.45nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C to 150°C
Compatibility
Surface Mount (SOT-23-6 Package)
Application Areas
Switching Power Supplies
Motor Drives
Industrial Controls
Battery-Powered Devices
Product Lifecycle
Currently in production
Replacement options available
Key Reasons to Choose
High voltage capability
Low on-resistance for efficient power conversion
Fast switching speed for high-frequency applications
Reliable performance over wide temperature range