Manufacturer Part Number
ZVN4424GTA
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET transistor
Designed for general-purpose switching and amplifier applications
Product Features and Performance
Drain to Source Voltage (Vdss): 240 V
Gate to Source Voltage (Vgs): ±40 V
On-State Resistance (Rds(on)): 5.5 Ω @ 500 mA, 10 V
Continuous Drain Current (Id): 500 mA @ 25 °C
Input Capacitance (Ciss): 200 pF @ 25 V
Power Dissipation (Pd): 2.5 W @ 25 °C
Product Advantages
Low on-state resistance for efficient power switching
Wide operating voltage range
Suitable for general-purpose switching and amplifier applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 1.8 V @ 1 mA
Drive Voltage (Vgs): 2.5 V (max Rds(on)), 10 V (min Rds(on))
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55 °C to 150 °C
Compatibility
Package: SOT-223-3
Mounting type: Surface Mount
Application Areas
General-purpose switching and amplifier applications
Power management circuits
Motor control
Electronic appliances
Product Lifecycle
Current product model, no plans for discontinuation
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Reliable and robust design for general-purpose applications
Efficient power switching capabilities with low on-state resistance
Wide operating voltage range for versatile use
Compact surface-mount package for space-constrained designs
Compliance with RoHS3 environmental standards