Manufacturer Part Number
ZVN3310FTA
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance of 10 Ohm @ 500mA, 10V
High drain-to-source voltage of 100V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 40pF @ 25V
Power dissipation of up to 330mW
Product Advantages
Efficient power switching and control
Reliable high-voltage operation
Suitable for wide temperature applications
Compact surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 10 Ohm @ 500mA, 10V
Continuous Drain Current (Id): 100mA @ 25°C
Input Capacitance (Ciss): 40pF @ 25V
Power Dissipation (Pd): 330mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with various electronic circuits and applications requiring a high-voltage, low on-resistance N-channel MOSFET.
Application Areas
Power management circuits
Switching circuits
High-voltage control and amplification
Automotive electronics
Industrial control systems
Product Lifecycle
This product is an active, in-production device from Diodes Incorporated. There are no known plans for discontinuation, and replacement or upgrade options may be available.
Key Reasons to Choose This Product
Efficient power switching and control with low on-resistance
Reliable high-voltage operation up to 100V
Suitable for wide temperature applications from -55°C to 150°C
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally-friendly applications