Manufacturer Part Number
ZVN0545GTA
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss): 450V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 50Ohm @ 100mA, 10V
Continuous Drain Current (Id) @ 25°C: 140mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Product Advantages
High Drain-Source Voltage
Low On-Resistance
Compact Surface Mount Package
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Manufacturer's Packaging: SOT-223-3
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Application Areas
Suitable for use in a variety of power electronics and control applications
Product Lifecycle
Current production, no known discontinuation plans
Key Reasons to Choose This Product
High Voltage Capability
Low On-Resistance
Compact Surface Mount Package
RoHS Compliance
Suitable for a Wide Range of Power Electronics Applications