Manufacturer Part Number
ZDT1053TA
Manufacturer
Diodes Incorporated
Introduction
Dual NPN bipolar junction transistor (BJT) array
Designed for switching and amplification applications
Product Features and Performance
High current capability up to 5A
High voltage rating up to 75V
High transition frequency of 140MHz
Low collector-emitter saturation voltage of 440mV @ 250mA, 5A
Product Advantages
Compact surface mount package (SOT-223-8)
RoHS3 compliant
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Power Dissipation: 2.75W
Collector-Emitter Breakdown Voltage: 75V
Collector Current (Max): 5A
Collector Cutoff Current: 10nA
DC Current Gain (hFE): 300 min @ 1A, 2V
Quality and Safety Features
RoHS3 compliant
Reliable operation within specified temperature range
Compatibility
Suitable for switching and amplification applications in various electronic circuits
Application Areas
Power supplies
Motor controls
Telecommunications equipment
Industrial control systems
Product Lifecycle
This product is an active, in-production part from Diodes Incorporated.
Replacement or upgrade options may be available, but no discontinuation is currently planned.
Key Reasons to Choose This Product
High current and voltage handling capabilities
Excellent high-frequency performance
Compact surface mount package
Wide temperature range operation
RoHS3 compliance for environmental responsibility