MMST4403-7-F - Diodes Incorporated

Manufacturer Part Number

MMST4403-7-F

Manufacturer

Diodes Incorporated

Introduction

PNP Bipolar Junction Transistor (BJT) in SOT-323 package

Product Features and Performance

Low Vce(sat) for efficient switching and amplification

High transition frequency of 200 MHz

Wide operating temperature range of -55°C to 150°C

Low power dissipation of 200 mW

Product Advantages

Optimized for switching and amplification applications

Compact SOT-323 surface mount package

Excellent high-frequency performance

Reliable operation over wide temperature range

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCE,max): 40 V

Collector Current (IC,max): 600 mA

Vce Saturation (Vce(sat),max): 750 mV @ 50 mA, 500 mA

DC Current Gain (hFE,min): 100 @ 150 mA, 2 V

Transition Frequency (fT): 200 MHz

Quality and Safety Features

RoHS3 compliant

Reliable operation in industrial and consumer applications

Compatibility

Suitable for surface mount applications

Compatible with standard SMT assembly processes

Application Areas

Switching and amplification circuits

Audio and power amplifiers

Telecommunications equipment

Industrial control and automation

Product Lifecycle

Current product, no plans for discontinuation

Replacement and upgrade options available from manufacturer

Key Reasons to Choose

Excellent high-frequency performance

Low power dissipation and efficient switching

Wide operating temperature range

Compact and reliable surface mount package

RoHS compliance for environmental safety