MMDT4401-7-F - Diodes Incorporated

Manufacturer Part Number

MMDT4401-7-F

Manufacturer

Diodes Incorporated

Introduction

Dual NPN Transistor Array

Product Features and Performance

Dual NPN transistors in a single package

High frequency operation up to 250MHz

Low collector-emitter saturation voltage

Wide temperature range of -55°C to 150°C

Low power dissipation of 200mW

Product Advantages

Space-saving compact package

Improved circuit performance

Enhanced reliability and stability

Suitable for high-frequency applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 40V (max)

Collector Current: 600mA (max)

Collector-Emitter Saturation Voltage: 750mV @ 50mA, 500mA

DC Current Gain: 100 (min) @ 150mA, 1V

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Designed for safety and long-term use

Compatibility

Surface mount package (SOT-363)

Compatible with a variety of electronic circuits and systems

Application Areas

Amplifiers

Switches

Logic gates

General-purpose electronic circuits

Product Lifecycle

This product is currently in production and available

No known plans for discontinuation or replacement at this time

Key Reasons to Choose This Product

Excellent high-frequency performance

Compact and space-saving design

Reliable and stable operation

Suitable for a wide range of electronic applications

Cost-effective solution for dual transistor needs