MMBTA92-7-F - Diodes Incorporated

Manufacturer Part Number

MMBTA92-7-F

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), PNP single type

Product Features and Performance

Automotive grade, AEC-Q101 qualified

Wide operating temperature range: -55°C to 150°C

Low collector-emitter saturation voltage: 500 mV @ 2 mA, 20 mA

High current gain: Minimum 25 @ 30 mA, 10 V

High transition frequency: 50 MHz

Product Advantages

Reliable performance in automotive and industrial applications

Small footprint and surface mount package (SOT-23-3)

RoHS3 compliant

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 300 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 250 nA

Power Dissipation (Max): 300 mW

Quality and Safety Features

Complies with RoHS3 directive

AEC-Q101 qualified for automotive applications

Compatibility

Compatible with standard PNP BJT applications

Application Areas

Automotive electronics

Industrial control systems

Power supplies

Switching circuits

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacements and upgrades may be available from the manufacturer.

Key Reasons to Choose This Product

Reliable performance in harsh environments due to automotive-grade design and wide operating temperature range

Small form factor and surface mount package for space-constrained applications

Low saturation voltage and high current gain for efficient power switching

High transition frequency enables high-speed applications

RoHS3 compliance for environmentally-friendly use