Manufacturer Part Number
MMBT3906-7-F
Manufacturer
Diodes Incorporated
Introduction
PNP Bipolar Junction Transistor (BJT)
Product Features and Performance
Designed for general-purpose switching and amplification applications
Operating temperature range: -55°C to 150°C
Power rating: 300 mW
Collector-Emitter Breakdown Voltage: 40V
Collector Current (max): 200 mA
DC Current Gain: 100 (min) @ 10 mA, 1V
Transition Frequency: 250 MHz
Product Advantages
Reliable and robust design
Excellent thermal stability
Wide operating temperature range
Suitable for various electronic applications
Key Technical Parameters
Transistor Type: PNP
Package: SOT-23-3
Mounting Type: Surface Mount
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
AEC-Q101 qualified for automotive applications
Compliant with RoHS3 environmental regulations
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
General-purpose switching and amplification
Automotive electronics
Industrial control systems
Consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Reliable and robust performance
Wide operating temperature range
Excellent thermal stability
Suitable for a variety of electronic applications
AEC-Q101 qualified for automotive use
RoHS3 compliance for environmental safety