Manufacturer Part Number
MMBT3904-7-F
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 Package
Automotive Grade, AEC-Q101 Qualified
Tape and Reel Packaging
Operating Temperature: -55°C to 150°C
Power Rating: 300 mW
Collector-Emitter Breakdown Voltage: 40 V
Collector Current: 200 mA
Collector Cutoff Current: 50 nA
Collector-Emitter Saturation Voltage: 300 mV
DC Current Gain: 100
Transition Frequency: 300 MHz
Product Advantages
Reliable automotive-grade performance
Small footprint surface mount package
Wide temperature range operation
Key Technical Parameters
NPN Transistor Type
SOT-23-3 Packaging
300 mW Power Rating
40 V Collector-Emitter Breakdown Voltage
200 mA Collector Current
100 DC Current Gain
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified for Automotive Applications
Compatibility
Suitable for a wide range of electronic circuit designs
Compatible with standard SMT assembly processes
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Analog and digital amplifier circuits
Product Lifecycle
In active production
Replacement and upgrade options available
Key Reasons to Choose
Reliable automotive-grade performance
Small footprint for space-constrained designs
Wide operating temperature range
Robust electrical characteristics
RoHS compliance and AEC-Q101 qualification