Manufacturer Part Number
FZT955TA
Manufacturer
Diodes Incorporated
Introduction
High-performance, high-voltage PNP bipolar junction transistor (BJT)
Suitable for a wide range of power amplifier and switching applications
Product Features and Performance
High voltage capability up to 140V
High current handling up to 4A
High DC current gain of 100 min. @ 1A, 5V
High-frequency performance up to 110MHz
Low saturation voltage of 370mV @ 300mA, 3A
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
Suitable for high-voltage, high-current applications
Robust performance across temperature extremes
Small surface-mount package for compact designs
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 140V
Collector Current (Max): 4A
DC Current Gain (Min): 100 @ 1A, 5V
Transition Frequency: 110MHz
Power Dissipation (Max): 3W
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable performance in harsh environments
Compatibility
Compatible with a wide range of power amplifier and switching circuit designs
Application Areas
Power amplifiers
Switching circuits
Motor drives
Power supplies
Industrial controls
Product Lifecycle
This product is currently in production and available for purchase
No plans for discontinuation or upgrades in the near future
Several Key Reasons to Choose This Product
High voltage and current handling capability for demanding power applications
Robust performance across a wide temperature range
Small surface-mount package for compact designs
Excellent frequency response for high-speed switching applications
RoHS3 compliance for use in environmentally-conscious designs
