Manufacturer Part Number
FZT757TA
Manufacturer
Diodes Incorporated
Introduction
High voltage, high current PNP bipolar junction transistor (BJT)
Designed for use in power amplifier, switching, and control applications
Product Features and Performance
Capable of operating at high voltages up to 300V
Capable of handling high currents up to 500mA
High DC current gain of at least 50 at 100mA, 5V
High transition frequency of 30MHz
Suitable for surface mount applications
Product Advantages
Robust and reliable performance
Capable of high voltage and high current operation
Suitable for a wide range of power electronics and control applications
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Maximum power dissipation: 2W
Collector-Emitter breakdown voltage: 300V
Collector current (max): 500mA
Collector cutoff current (max): 100nA
Collector-Emitter saturation voltage: 500mV @ 10mA, 100mA
Quality and Safety Features
RoHS3 compliant
Manufactured in a controlled environment to ensure high quality and reliability
Compatibility
Suitable for use in surface mount applications
Available in SOT-223-3 package
Application Areas
Power amplifiers
Switching circuits
Control applications
General-purpose power electronics
Product Lifecycle
This product is currently in active production and availability
Replacement or upgrade options may be available from Diodes Incorporated
Key Reasons to Choose This Product
Capable of high voltage and high current operation
Excellent DC current gain and transition frequency performance
Reliable and robust construction for demanding applications
Suitability for surface mount usage
RoHS3 compliance for environmental responsibility
