Manufacturer Part Number
FZT649TA
Manufacturer
Diodes Incorporated
Introduction
High-performance NPN bipolar junction transistor (BJT) suitable for general-purpose amplifier and switching applications.
Product Features and Performance
Power handling capacity up to 2W
Collector-emitter breakdown voltage up to 25V
Collector current up to 3A
DC current gain up to 100 at 1A and 2V
Transition frequency up to 240MHz
Product Advantages
Excellent power handling and switching capabilities
Stable performance over wide temperature range (-55°C to 150°C)
Compact and space-saving SMT package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 25V
Collector Current (IC): 3A
DC Current Gain (hFE): 100 (min) @ 1A, 2V
Transition Frequency (fT): 240MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance in high-stress conditions
Compatibility
Suitable for a wide range of general-purpose amplifier and switching applications
Application Areas
Power supplies
Amplifiers
Switching circuits
General-purpose electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement/upgrade options available if required
Key Reasons to Choose This Product
Excellent power handling and switching capabilities
Stable and reliable performance across wide temperature range
Compact and space-saving SMT package
RoHS3 compliance for environmental responsibility
Availability of replacement/upgrade options as needed
FZT649onsemiTRANS NPN 25V 3A SOT223-4