Manufacturer Part Number
FMMT723QTA
Manufacturer
Diodes Incorporated
Introduction
High-voltage, high-current PNP bipolar junction transistor (BJT) for general-purpose amplifier and switching applications.
Product Features and Performance
High voltage rating up to 100V
High current capability up to 1A
High transition frequency up to 200MHz
Low collector-emitter saturation voltage of 330mV @ 1A, 150mA
Wide operating temperature range from -55°C to 150°C
Product Advantages
Suitable for high-power, high-speed switching and amplifier circuits
Excellent thermal and electrical characteristics
Compact surface-mount package for efficient board space utilization
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 100V
Collector Current (IC): 1A
DC Current Gain (hFE): 250 min @ 500mA, 10V
Transition Frequency (fT): 200MHz
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor controls
Audio amplifiers
Switching regulators
General-purpose amplifier and switching applications
Product Lifecycle
Currently in active production
No information on impending discontinuation
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High voltage and current capabilities for demanding applications
Excellent high-frequency performance for high-speed switching
Compact surface-mount package for efficient board space utilization
Reliable and RoHS3-compliant construction for quality assurance
Broad compatibility with various electronic circuits and systems