Manufacturer Part Number
FCX458TA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
ROHS3 Compliant
SOT-89-3 Package
Operating Temperature Range: -65°C to 150°C
Max Power: 1 W
Max Collector-Emitter Breakdown Voltage: 400 V
Max Collector Current: 225 mA
Max Collector Cutoff Current: 100 nA
Max Collector-Emitter Saturation Voltage: 500 mV @ 6 mA, 50 mA
NPN Transistor Type
Minimum DC Current Gain (hFE): 100 @ 50 mA, 10 V
Transition Frequency: 50 MHz
Surface Mount Mounting
Product Advantages
Wide operating temperature range
High voltage and current handling capability
Low collector-emitter saturation voltage
Good high-frequency performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage
Collector Current
Collector Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Quality and Safety Features
ROHS3 Compliant
Reliable SOT-89-3 package
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Power electronics
Amplifier circuits
Switching circuits
General-purpose electronic applications
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Wide operating temperature range
High voltage and current handling capability
Low collector-emitter saturation voltage
Good high-frequency performance
Reliable SOT-89-3 package
ROHS3 compliance
Compatibility with a wide range of electronic applications
