Manufacturer Part Number
DZTA42-13
Manufacturer
Diodes Incorporated
Introduction
High-voltage, high-power NPN bipolar junction transistor (BJT)
Product Features and Performance
High voltage capability up to 300V
High power handling up to 1W
High current capability up to 500mA
High current gain (hFE) of at least 40
High transition frequency of 50MHz
Product Advantages
Suitable for high-voltage, high-power applications
Excellent performance characteristics
Compact surface-mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (BVCE0): 300V
Collector Current (IC): 500mA
Collector Power Dissipation (PC): 1W
Current Gain (hFE): Minimum 40 @ 30mA, 10V
Transition Frequency (fT): 50MHz
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Fits in TO-261-4, TO-261AA packages
Can be used in surface-mount applications
Application Areas
High-voltage, high-power amplifiers
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose
High voltage and power handling capabilities
Excellent performance characteristics
Compact surface-mount package
RoHS3 compliance for environmental safety
