Manufacturer Part Number
DZT5551-13
Manufacturer
Diodes Incorporated
Introduction
High voltage, high current NPN bipolar transistor in a SOT-223-3 package
Product Features and Performance
Power rating up to 1W
Collector-emitter breakdown voltage up to 160V
Collector current up to 600mA
Collector cutoff current up to 50nA
Saturation voltage as low as 200mV
DC current gain of at least 80
Transition frequency up to 300MHz
Product Advantages
High voltage and current capability
Low saturation voltage
High current gain
High frequency performance
Surface mount package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 160V
Current Collector (Ic) (Max): 600mA
Current Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency Transition: 300MHz
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Package: SOT-223-3
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifier circuits
Product Lifecycle
Current product, no discontinuation or replacement plans
Key Reasons to Choose
High voltage and current capability
Low saturation voltage for efficient power conversion
High current gain for driving high current loads
High frequency performance for high-speed switching
Surface mount package for compact designs
DZT T11 9.1BLAPIS Technology