Manufacturer Part Number
DXTP560BP5-13
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
PowerDI 5 Package
Wide Operating Temperature Range: -55°C to 150°C
High Power Capability: 2.8 W
High Collector-Emitter Breakdown Voltage: 500 V
High Collector Current: 150 mA
Low Collector Cutoff Current: 100 nA
Low Collector-Emitter Saturation Voltage: 500 mV @ 10 mA, 50 mA
High DC Current Gain: 80 @ 50 mA, 10 V
High Transition Frequency: 60 MHz
Product Advantages
Compact surface mount package
Reliable performance in high power applications
Suitable for various electronic circuit designs
Key Technical Parameters
Package: PowerDI 5
Collector-Emitter Breakdown Voltage: 500 V
Collector Current: 150 mA
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 500 mV @ 10 mA, 50 mA
DC Current Gain: 80 @ 50 mA, 10 V
Transition Frequency: 60 MHz
Quality and Safety Features
RoHS3 Compliant
Wide Operating Temperature Range: -55°C to 150°C
Compatibility
Suitable for various electronic circuit designs and applications
Application Areas
Suitable for high power electronic circuits and applications
Product Lifecycle
Current product offering, no indication of discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power capability
High voltage and current ratings
Reliable performance in wide operating temperature range
Compact surface mount package
Suitable for various electronic circuit designs and applications
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