Manufacturer Part Number
DSS60601MZ4-13
Manufacturer
Diodes Incorporated
Introduction
High-performance NPN bipolar junction transistor (BJT) suitable for various power and switching applications.
Product Features and Performance
High collector-emitter breakdown voltage (60V)
High collector current capability (6A)
High DC current gain (120 minimum at 1A, 2V)
High transition frequency (100MHz)
Low collector-emitter saturation voltage (300mV at 600mA, 6A)
Wide operating temperature range (-55°C to 150°C)
2W maximum power dissipation
Product Advantages
Robust and reliable performance
Versatile power switching and amplification capabilities
Suitable for high-frequency and high-current applications
Compact surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 60V
Collector Current (IC): 6A
DC Current Gain (hFE): 120 minimum at 1A, 2V
Transition Frequency (fT): 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)): 300mV at 600mA, 6A
Operating Temperature Range: -55°C to 150°C
Power Dissipation: 1.2W
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Safe and stable operation within specified parameters
Compatibility
Suitable for a wide range of power electronics and switching applications
Compatible with various electronic circuit designs and systems
Application Areas
Switching power supplies
Motor controls
Inverters
Amplifiers
General-purpose power electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available if required
Several Key Reasons to Choose This Product
Excellent power handling and switching capabilities
High reliability and long operating life
Compact and space-saving surface mount package
Wide temperature range for use in diverse environments
Cost-effective solution for power electronics applications
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