DSS5240T-7 - Diodes Incorporated

Manufacturer Part Number

DSS5240T-7

Manufacturer

Diodes Incorporated

Introduction

High-voltage, high-current PNP bipolar junction transistor

Product Features and Performance

High voltage capability (40V collector-emitter breakdown)

High current capability (2A collector current)

High transition frequency (100MHz)

High DC current gain (210 minimum at 1A, 2V)

Low collector-emitter saturation voltage (350mV max at 200mA, 2A)

Wide operating temperature range (-55°C to 150°C)

600mW power dissipation

Product Advantages

Suitable for high-power, high-speed switching and amplifier applications

Provides excellent performance in a compact SOT-23-3 package

RoHS compliant for environmentally-conscious design

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 40V

Collector Current (Max): 2A

Collector Cutoff Current: 100nA

DC Current Gain: 210 (min) at 1A, 2V

Transition Frequency: 100MHz

Power Dissipation: 600mW

Quality and Safety Features

Compliant with RoHS3 directive for hazardous substance restrictions

Qualified to AEC-Q101 standard for automotive-grade reliability

Compatibility

Compatible with standard SOT-23-3 mounting and footprint

Suitable for surface mount assembly

Application Areas

High-power switching circuits

Amplifier circuits

Automotive electronics

Industrial control systems

Product Lifecycle

This product is currently in production and widely available

No plans for discontinuation or replacement at this time

Key Reasons to Choose This Product

High voltage and current capabilities for demanding applications

Excellent high-frequency performance for high-speed circuits

Compact and efficient SOT-23-3 package

Automotive-grade reliability and RoHS compliance

Proven track record in a variety of industrial and consumer electronics