Manufacturer Part Number
DSS20200L-7
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT)
Product Features and Performance
2A collector current capability
20V collector-emitter breakdown voltage
600mW power dissipation
100MHz transition frequency
Typical DC current gain of 180 at 1A, 2V
Product Advantages
Compact SOT-23-3 surface mount package
Suitable for a wide range of applications
Reliable performance in harsh environments
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Collector-emitter breakdown voltage: 20V
Collector current (max): 2A
Power dissipation: 600mW
Quality and Safety Features
RoHS3 compliant
Reliable construction and testing for consistent performance
Compatibility
Suitable for a wide range of electronic circuits and systems
Application Areas
Amplifiers
Switches
Power supplies
Motor control
General-purpose electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent performance characteristics for a wide range of applications
Compact and reliable surface mount package
Suitable for use in harsh environments
Cost-effective solution for high-performance PNP transistor requirements