DSM80100M-7 - Diodes Incorporated

Manufacturer Part Number

DSM80100M-7

Manufacturer

Diodes Incorporated

Introduction

High-performance PNP bipolar junction transistor (BJT) with an integrated diode, designed for general-purpose amplification and switching applications.

Product Features and Performance

High current handling capability up to 500 mA

Broad operating temperature range from -65°C to 150°C

Low collector-emitter saturation voltage of 250 mV at 10 mA, 100 mA

High DC current gain (hFE) of 120 min at 10 mA, 1 V

Integrated diode for clamping and protection

Small and space-efficient SOT-26 package

Product Advantages

Versatile and reliable performance in a compact package

Suitable for a wide range of amplification and switching needs

Integrated diode provides additional circuit protection

Excellent thermal stability and low power dissipation

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 80 V

Current Collector (Ic) (Max): 500 mA

Current Collector Cutoff (Max): 100 nA (ICBO)

Power Max: 600 mW

Operating Temperature: -65°C ~ 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Reliable and stable performance

Suitable for harsh environments and high-reliability applications

Compatibility

Compatible with industry-standard SOT-26 footprint

Can be used as a replacement for similar PNP BJT transistors

Application Areas

General-purpose amplification and switching circuits

Audio and power amplifier circuits

Voltage regulation and control systems

Industrial and consumer electronics applications

Product Lifecycle

Current production model, no immediate plans for discontinuation

Replacement or upgrade options available if required

Key Reasons to Choose This Product

High performance and reliability in a compact package

Versatile applications across various electronic systems

Excellent thermal stability and low power dissipation

Integrated diode for added circuit protection

RoHS3 compliance for use in eco-friendly designs