Manufacturer Part Number
DRDNB16W-7
Manufacturer
Diodes Incorporated
Introduction
Bipolar Junction Transistor (BJT), NPN, Pre-Biased
Product Features and Performance
High DC current gain
High collector-emitter breakdown voltage
High-frequency operation
Low collector-emitter saturation voltage
Built-in base and emitter resistors
Product Advantages
Compact surface mount package
Suitable for high-speed switching and amplification applications
Provides improved noise performance and thermal stability
Key Technical Parameters
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 600 mA
Collector Cutoff Current: 500 nA
DC Current Gain (hFE): Minimum 56 @ 50 mA, 5 V
Transition Frequency: 200 MHz
Base Resistor: 1 kΩ
Emitter-Base Resistor: 10 kΩ
Quality and Safety Features
RoHS3 compliant
Suitable for Tape and Reel packaging
Compatibility
6-TSSOP, SC-88, SOT-363 package
Surface mount assembly
Application Areas
High-speed switching
Amplification
Audio and video circuits
Power management
General-purpose electronics
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose This Product
High performance in a compact package
Excellent noise and thermal characteristics
Wide range of applications in electronics
Reliable and RoHS-compliant design
Availability in standard packaging for easy integration