Manufacturer Part Number
DP350T05-7
Manufacturer
Diodes Incorporated
Introduction
High-voltage, high-power PNP Bipolar Junction Transistor (BJT)
Product Features and Performance
High collector-emitter breakdown voltage of 350V
High collector current capability of 500mA
Low collector-emitter saturation voltage of 1V @ 5mA, 50mA
High DC current gain (hFE) of 20 min. @ 50mA, 10V
Wide operating temperature range of -55°C to 150°C
Fast transition frequency of 50MHz
Product Advantages
Excellent high-voltage and high-power handling capabilities
Low saturation voltage for efficient power conversion
High current gain for driving high-current loads
Wide operating temperature range for versatile applications
High-speed switching performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 350V
Collector Current (IC): 500mA
Collector-Emitter Saturation Voltage (VCE(sat)): 1V @ 5mA, 50mA
DC Current Gain (hFE): 20 min. @ 50mA, 10V
Transition Frequency (fT): 50MHz
Operating Temperature Range (TJ): -55°C to 150°C
Power Dissipation: 300mW
Quality and Safety Features
RoHS3 compliant
Packaged in industry-standard SOT-23-3 surface mount package
Compatibility
Suitable for a wide range of high-voltage, high-power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial controls
Telecommunications equipment
Automotive electronics
Product Lifecycle
This product is currently in production and available for purchase
Replacement or upgrade options may be available, but details should be confirmed with the manufacturer
Key Reasons to Choose This Product
Excellent high-voltage and high-power handling capabilities
Low saturation voltage for efficient power conversion
High current gain for driving high-current loads
Wide operating temperature range for versatile applications
High-speed switching performance
Industry-standard packaging for easy integration