Manufacturer Part Number
DMTH8012LPSQ-13
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel MOSFET with low on-resistance and high-speed switching characteristics
Product Features and Performance
80V drain-to-source voltage
Low on-resistance of 17mΩ @ 12A, 10V
10A continuous drain current at 25°C
High-speed switching with 2051pF input capacitance
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency due to low on-resistance
High-speed switching for fast-paced applications
Wide temperature range suitable for demanding environments
Key Technical Parameters
Drain-to-source voltage (Vdss): 80V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 17mΩ @ 12A, 10V
Continuous drain current (Id): 10A @ 25°C, 72A @ 125°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount (PowerDI5060-8 package)
Suitable for tape and reel packaging
Application Areas
Automotive electronics
Industrial power supplies
Telecommunications equipment
Consumer electronics
Product Lifecycle
Current production, no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance
High-speed switching capabilities
Wide operating temperature range for diverse applications
Automotive and industrial-grade quality and safety
Surface mount packaging for convenient integration