Manufacturer Part Number
DMT69M8LFV-7
Manufacturer
Diodes Incorporated
Introduction
This product is a discrete semiconductor device, specifically a single N-channel MOSFET transistor.
Product Features and Performance
60V drain-source voltage rating
Maximum 16V gate-source voltage
5mOhm maximum on-resistance at 13.5A, 10V
45A continuous drain current at 25°C case temperature
1925pF maximum input capacitance at 30V
42W maximum power dissipation at case temperature
3V maximum gate threshold voltage at 250A
Supports 4.5V to 10V drive voltage range
Product Advantages
Automotive-qualified to AEC-Q101 standard
Compact PowerDI3333-8 (Type UX) surface-mount package
Suitable for high-power, high-efficiency switch-mode applications
Key Technical Parameters
N-channel MOSFET technology
60V drain-source voltage
±16V maximum gate-source voltage
5mOhm maximum on-resistance
45A maximum continuous drain current
1925pF maximum input capacitance
42W maximum power dissipation
Quality and Safety Features
RoHS3 compliant
Automotive-qualified to AEC-Q101 standard
Compatibility
This MOSFET is designed for use in a wide range of power electronics and automotive applications.
Application Areas
Switch-mode power supplies
Motor drives
Automotive electronics
Industrial control systems
Product Lifecycle
This product is currently available and actively supported by the manufacturer. No information about upcoming discontinuation or replacement models is available.
Key Reasons to Choose This Product
Automotive-qualified for reliable performance in harsh environments
Low on-resistance for high-efficiency power conversion
Compact surface-mount package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
Comprehensive technical specifications and parameters