DMS3015SSS-13 - Diodes Incorporated

Manufacturer Part Number

DMS3015SSS-13

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Transistor FET, MOSFET Single

Product Features and Performance

RoHS3 Compliant

8-SO Package

Surface Mount Mounting

Operating Temperature: -55°C to 150°C

Drain-to-Source Voltage (Vdss): 30V

Maximum Gate-to-Source Voltage (Vgs): ±12V

Maximum On-Resistance (Rds(on)): 11.9mΩ @ 11A, 10V

MOSFET Technology

Continuous Drain Current (Id): 11A @ 25°C

Input Capacitance (Ciss): 1276pF @ 15V

Schottky Diode Body

Maximum Power Dissipation: 1.55W @ 25°C

N-Channel FET

Threshold Voltage (Vgs(th)): 2.5V @ 250μA

Drive Voltage: 4.5V (Max Rds(on)), 10V (Min Rds(on))

Gate Charge (Qg): 30.6nC @ 10V

Product Advantages

RoHS3 Compliant

High Drain Current Capability

Low On-Resistance

Wide Operating Temperature Range

Compact 8-SO Package

Key Technical Parameters

Drain-to-Source Voltage (Vdss)

Maximum Gate-to-Source Voltage (Vgs)

On-Resistance (Rds(on))

Continuous Drain Current (Id)

Input Capacitance (Ciss)

Power Dissipation

Threshold Voltage (Vgs(th))

Gate Charge (Qg)

Quality and Safety Features

RoHS3 Compliant

Suitable for High-Temperature Applications

Compatibility

Compatible with various electronic circuits and systems requiring a high-performance N-Channel MOSFET

Application Areas

Power management

Motor control

Switching circuits

Amplifier circuits

Industrial and consumer electronics

Product Lifecycle

Currently available

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

High drain current capability

Low on-resistance

Wide operating temperature range

Compact 8-SO package

RoHS3 compliant

Suitable for high-temperature applications

High-performance N-Channel MOSFET