Manufacturer Part Number
DMP6023LE-13
Manufacturer
Diodes Incorporated
Introduction
High-performance P-channel MOSFET transistor suitable for power management and switching applications
Product Features and Performance
Low on-resistance (Rds(on)) for improved efficiency
High current capability up to 18.2A
Fast switching and low gate charge for high-speed operation
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency
Reliable and robust performance
Suitable for high-frequency and high-current applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 28mΩ @ 5A, 10V
Continuous Drain Current (Id): 7A (Ta), 18.2A (Tc)
Input Capacitance (Ciss): 2569pF @ 30V
Power Dissipation (Max): 2W (Ta)
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Compatible with various power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Battery chargers
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and performance
High current capability and fast switching for demanding applications
Wide operating temperature range for reliable operation
Robust and RoHS-compliant design for quality assurance