Manufacturer Part Number
DMP3065LVT-7
Manufacturer
Diodes Incorporated
Introduction
P-channel MOSFET transistor
Part of the DMP3065 series
Product Features and Performance
30V drain-source voltage (Vdss)
±20V gate-source voltage (Vgs)
42mOhm maximum on-resistance (Rds(on)) at 4.9A, 10V
9A continuous drain current (Id) at 25°C
587pF maximum input capacitance (Ciss) at 15V
2W maximum power dissipation at 25°C
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for efficient power switching
High drain current capability
Wide operating temperature range
Key Technical Parameters
MOSFET technology
P-channel FET type
1V maximum gate-source threshold voltage (Vgs(th)) at 250µA
5V to 10V drive voltage range for Rds(on) specification
3nC maximum gate charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Compatibility
SOT-23-6 and TSOT-23-6 surface mount packages
Application Areas
Power switching and control circuits
Battery management systems
Motor drives
Voltage regulation
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose
Excellent power efficiency due to low on-resistance
Broad operating temperature range for harsh environments
Surface mount packaging for compact designs
RoHS compliance for environmental responsibility