DMP26M7UFG-7 - Diodes Incorporated

Manufacturer Part Number

DMP26M7UFG-7

Manufacturer

Diodes Incorporated

Introduction

High-performance power MOSFET with low on-resistance and fast switching characteristics for power management and control applications.

Product Features and Performance

Low on-resistance (RDS(on) as low as 6.7 mΩ)

High current capability (continuous drain current up to 40 A)

Fast switching speed

Low gate charge (Qg max 156 nC)

Wide operating temperature range (-55°C to 150°C)

Robust and reliable power device

Product Advantages

Excellent power efficiency due to low on-resistance

Enables high-density and high-power-density power designs

Suitable for a wide range of power management and control applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 20 V

Gate-to-Source Voltage (VGS): ±10 V

On-Resistance (RDS(on)): 6.7 mΩ @ 15 A, 4.5 V

Continuous Drain Current (ID): 18 A (Ta), 40 A (Tc)

Input Capacitance (Ciss): 5940 pF @ 10 V

Power Dissipation (PD): 2.3 W (Ta)

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power management and control applications, such as power supplies, motor drives, and industrial automation.

Application Areas

Power management and control

Power supplies

Motor drives

Industrial automation

Product Lifecycle

Current product offering

Replacements and upgrades available as needed

Several Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

High current handling capability

Fast switching speed for high-performance power applications

Wide operating temperature range for reliable operation in harsh environments

Robust and reliable power device designed to high quality standards