Manufacturer Part Number
DMP2130LDM-7
Manufacturer
Diodes Incorporated
Introduction
The DMP2130LDM-7 is a P-channel enhancement mode power MOSFET transistor manufactured by Diodes Incorporated.
Product Features and Performance
MOSFET (Metal Oxide) technology
Drain to source voltage (Vdss) of 20V
Gate-source voltage (Vgs) max of ±12V
On-state resistance (Rds(on)) of 80mΩ @ 4.5A, 4.5V
Continuous drain current (Id) of 3.4A at 25°C
Input capacitance (Ciss) of 443pF @ 16V
Power dissipation (Pd) of 1.25W
Gate charge (Qg) of 7.3nC @ 4.5V
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-state resistance for improved efficiency
High switching speed for fast-switching applications
Compact SOT-23-6 surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
On-State Resistance (Rds(on)): 80mΩ @ 4.5A, 4.5V
Continuous Drain Current (Id): 3.4A @ 25°C
Input Capacitance (Ciss): 443pF @ 16V
Power Dissipation (Pd): 1.25W
Gate Charge (Qg): 7.3nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
Compatible with MOSFET-based circuits and applications
Application Areas
Suitable for use in power management, switching, and control circuits
Applicable in consumer electronics, industrial equipment, and automotive electronics
Product Lifecycle
This product is an active and in-production device from Diodes Incorporated.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Low on-state resistance for improved efficiency
Fast switching speed for high-speed applications
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally-friendly applications
Broad operating temperature range for reliable performance