Manufacturer Part Number
DMP2110UW-7
Manufacturer
Diodes Incorporated
Introduction
P-Channel MOSFET transistor
Product Features and Performance
20V Drain-Source Voltage (Vdss)
±12V Gate-Source Voltage (Vgs)
100mΩ On-Resistance (Rds(on)) @ 1.5A, 4.5V
2A Continuous Drain Current (ID) @ 25°C
443pF Input Capacitance (Ciss) @ 6V
490mW Power Dissipation (Max)
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance for efficient power switching
High-speed switching performance
Wide operating temperature range
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
900mV Gate Threshold Voltage (Vgs(th)) @ 250μA
8V/4.5V Drive Voltage (Min Rds(on)/Max Rds(on))
6nC Gate Charge (Qg) @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Surface Mount Package (SOT-323)
Compatibility
Compatible with various electronic circuits and power management applications
Application Areas
Power management circuits
Switching applications
Battery-powered devices
Product Lifecycle
Current production, no discontinuation planned
Replacement/upgrade options available
Key Reasons to Choose
Excellent power switching performance
Wide operating temperature range
Small, surface mount package
RoHS compliance for environmental safety