Manufacturer Part Number
DMP2066LSN-7
Manufacturer
Diodes Incorporated
Introduction
P-channel enhancement mode MOSFET transistor
Product Features and Performance
Low on-resistance for low power loss
Fast switching speed
High power density
Suitable for high frequency switching applications
Product Advantages
Compact surface mount package
Optimized for efficient power conversion
Robust design for reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12 V
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.6 A, 4.5 V
Current Continuous Drain (Id) @ 25°C: 4.6 A
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Power Dissipation (Max): 1.25 W
Vgs(th) (Max) @ Id: 1.2 V @ 250 A
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Meets environmental and safety standards
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Amplifiers
DC-DC converters
Telecommunication equipment
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and low power loss
Fast switching capability for high-frequency applications
Compact and space-saving surface mount package
Reliable and robust design for long-term performance
Compliance with environmental and safety regulations