Manufacturer Part Number
DMP2035UVT-7
Manufacturer
Diodes Incorporated
Introduction
The DMP2035UVT-7 is a P-Channel MOSFET transistor from Diodes Incorporated.
Product Features and Performance
MOSFET (Metal Oxide) technology
Drain to Source Voltage (Vdss) of 20V
Maximum Gate-Source Voltage (Vgs) of ±12V
Low on-resistance (Rds(on)) of 35mΩ @ 4A, 4.5V
Continuous Drain Current (Id) of 6A at 25°C
Input Capacitance (Ciss) of 2400pF @ 10V
Power Dissipation (Max) of 1.2W at 25°C
Operating Temperature range of -55°C to 150°C
Product Advantages
Excellent performance and low on-resistance
Suitable for a wide range of applications
Surface mount and lead-free package
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs) (Max): ±12V
On-resistance (Rds(on)): 35mΩ @ 4A, 4.5V
Continuous Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 2400pF @ 10V
Power Dissipation (Max): 1.2W @ 25°C
Quality and Safety Features
RoHS3 compliant
TSOT-26 package
Compatibility
SOT-23-6 Thin, TSOT-23-6 package
Application Areas
Suitable for a wide range of applications, including power supplies, motor drives, and other electronic circuits
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and high current capability
Suitable for a wide range of applications
Surface mount and lead-free package for easy integration
RoHS3 compliant for environmental safety