Manufacturer Part Number
DMP2023UFDF-7
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
6-UDFN Exposed Pad Package
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs) Max: ±8V
On-Resistance (Rds On) Max: 27mOhm @ 7A, 4.5V
MOSFET (Metal Oxide) Technology
Continuous Drain Current (Id) Max: 7.6A
Input Capacitance (Ciss) Max: 1837pF @ 15V
Power Dissipation Max: 730mW
Product Advantages
Compact 6-UDFN Package
Low On-Resistance
High Continuous Drain Current
Wide Operating Temperature Range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs) Max: ±8V
On-Resistance (Rds On) Max: 27mOhm
Continuous Drain Current (Id) Max: 7.6A
Input Capacitance (Ciss) Max: 1837pF
Power Dissipation Max: 730mW
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
General Purpose MOSFET Applications
Product Lifecycle
Currently Available
No Discontinuation or Upgrade Information
Key Reasons to Choose
Compact 6-UDFN Package
Low On-Resistance
High Continuous Drain Current
Wide Operating Temperature Range
ROHS3 Compliant