Manufacturer Part Number
DMP2007UFG-7
Manufacturer
Diodes Incorporated
Introduction
High-performance P-channel power MOSFET with low RDS(on) for power management and high-efficiency applications.
Product Features and Performance
20V drain-source voltage
5 mOhm maximum on-resistance at 15A, 10V
18A continuous drain current at 25°C
40A continuous drain current at 100°C
4621 pF maximum input capacitance at 10V
3W maximum power dissipation at 25°C
-55°C to 150°C operating temperature range
Product Advantages
Excellent performance in power management and high-efficiency applications
Compact PowerDI3333-8 package for space-saving designs
Suitable for high-current, high-efficiency switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 5.5 mOhm
Continuous Drain Current (Id): 18A at 25°C, 40A at 100°C
Input Capacitance (Ciss): 4621 pF at 10V
Power Dissipation (Pd): 2.3W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for a wide range of power management and high-efficiency applications
Application Areas
Power management circuits
High-efficiency switching applications
Motor control
DC-DC converters
Automotive electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from Diodes Incorporated or other manufacturers.
Key Reasons to Choose This Product
Excellent performance in power management and high-efficiency applications
Low on-resistance for improved efficiency
High current handling capabilities
Compact and space-saving PowerDI3333-8 package
Suitable for a wide range of power management and high-efficiency applications
Backed by the reliability and quality of Diodes Incorporated
