DMNH6022SSD-13 - Diodes Incorporated

Manufacturer Part Number

DMNH6022SSD-13

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

Dual configuration

High voltage (60V) operation

Low on-resistance (27mOhm @ 5A, 10V)

High current capability (7.1A continuous @ 25°C, 22.6A peak)

Low input capacitance (2127pF @ 25V)

Low gate charge (32nC @ 10V)

Wide operating temperature range (-55°C to 175°C)

5W maximum power dissipation

Product Advantages

Suitable for automotive and industrial applications

Excellent thermal performance

Compact surface mount package (8-SOIC)

RoHS3 compliant

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V

Current Continuous Drain (Id) @ 25°C: 7.1A, 22.6A

Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V

Vgs(th) (Max) @ Id: 3V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V

Quality and Safety Features

AEC-Q101 automotive qualified

RoHS3 compliant

Compatibility

Suitable for a wide range of automotive, industrial, and consumer electronics applications

Application Areas

Automotive electronics (e.g., engine control, transmission, power steering)

Industrial automation and control

Power supplies and converters

Consumer electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from Diodes Incorporated or other MOSFET manufacturers.

Key Reasons to Choose This Product

High voltage and current capability for demanding applications

Low on-resistance and power dissipation for improved efficiency

Compact surface mount package for space-constrained designs

Wide operating temperature range and automotive-grade quality for reliability

RoHS3 compliance for environmentally-friendly applications