Manufacturer Part Number
DMN6040SSD-13
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
Dual configuration
Logic Level Gate
Drain to Source Voltage (Vdss) of 60V
RDS(on) of 40mOhm @ 4.5A, 10V
Continuous Drain Current (Id) of 5A @ 25°C
Input Capacitance (Ciss) of 1287pF @ 25V
Gate Charge (Qg) of 22.4nC @ 10V
Operating Temperature range of -55°C to 150°C
Product Advantages
Compact 8-SOIC (0.154", 3.90mm Width) surface mount package
Suitable for high-power, high-efficiency applications
Excellent thermal performance
Key Technical Parameters
Package: 8-SOIC (0.154", 3.90mm Width), Tape & Reel (TR)
Max Power: 1.3W
Vgs(th) (Max) of 3V @ 250A
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a variety of high-power, high-efficiency applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
Compact surface mount package
High power and efficiency
Excellent thermal performance
Broad operating temperature range
RoHS3 compliance