DMN4800LSS-13 - Diodes Incorporated

Manufacturer Part Number

DMN4800LSS-13

Manufacturer

Diodes Incorporated

Introduction

The DMN4800LSS-13 is a high-performance N-Channel MOSFET transistor from Diodes Incorporated.

Product Features and Performance

Drain to Source Voltage (Vdss) of 30V

Vgs (Max) of ±25V

Low On-Resistance (Rds On) of 16mOhm @ 9A, 10V

Continuous Drain Current (Id) of 9A at 25°C

Input Capacitance (Ciss) of 798pF @ 10V

Power Dissipation (Max) of 1.46W at 25°C

Wide Operating Temperature Range of -55°C to 150°C

Product Advantages

Excellent performance in power management applications

Low conduction losses for improved energy efficiency

Compact surface mount package for space-constrained designs

Key Technical Parameters

MOSFET Technology: N-Channel

Vgs(th) (Max) of 1.6V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) of 9.47nC @ 5V

Quality and Safety Features

RoHS3 Compliant

8-SOIC (0.154", 3.90mm Width) Package

Compatibility

Suitable for various power supply, motor control, and power conversion applications

Application Areas

Power management circuits

Motor control systems

Power conversion and inversion

Product Lifecycle

The DMN4800LSS-13 is an active product and currently available.

Replacement or upgrade options may be available from Diodes Incorporated.

Key Reasons to Choose This Product

Excellent performance and efficiency in power applications

Compact surface mount package for space-constrained designs

Wide operating temperature range for reliable operation

RoHS3 compliance for use in diverse applications

Readily available and actively supported by the manufacturer