DMN3730UFB4-7 - Diodes Incorporated

Manufacturer Part Number

DMN3730UFB4-7

Manufacturer

Diodes Incorporated

Introduction

A high-performance N-channel MOSFET transistor suitable for a wide range of power switching and control applications.

Product Features and Performance

Low on-resistance of 460 mOhm at 200 mA, 4.5V

High current capability of 750 mA continuous drain current at 25°C

Low gate charge of 1.6 nC at 4.5V

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 64.3 pF at 25V

High drain-source voltage rating of 30V

Product Advantages

Excellent power efficiency due to low on-resistance

High current handling capability

Fast switching performance

Compact surface-mount package

Key Technical Parameters

Drain-Source Voltage (Vdss): 30V

Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 460 mOhm @ 200 mA, 4.5V

Drain Current (Id): 750 mA @ 25°C

Input Capacitance (Ciss): 64.3 pF @ 25V

Power Dissipation (Pd): 470 mW @ 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power switching and control

Amplifiers

Motor drives

Power supplies

Battery management systems

Product Lifecycle

Currently available, no indication of discontinuation

Replacements and upgrades may be available from the manufacturer

Several Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

High current handling capability for demanding applications

Fast switching performance for efficient power conversion

Compact and surface-mountable package for space-constrained designs

Wide operating temperature range for use in harsh environments

RoHS3 compliance for environmentally-friendly applications