DMN33D8LDW-7 - Diodes Incorporated

Manufacturer Part Number

DMN33D8LDW-7

Manufacturer

Diodes Incorporated

Introduction

High-performance dual N-channel MOSFET in a small SOT-363 package

Product Features and Performance

2 N-Channel MOSFET in a single package

30V Drain-to-Source Voltage (Vdss)

4Ω Maximum On-Resistance (Rds(on)) at 250mA, 10V

250mA Continuous Drain Current (Id) at 25°C

48pF Input Capacitance (Ciss) at 5V

23nC Maximum Gate Charge (Qg) at 10V

-55°C to 150°C Operating Temperature Range

Product Advantages

Compact SOT-363 package for space-constrained applications

Low on-resistance for improved efficiency

Wide operating temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 2.4Ω @ 250mA, 10V

Continuous Drain Current (Id): 250mA at 25°C

Input Capacitance (Ciss): 48pF at 5V

Gate Charge (Qg): 1.23nC at 10V

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Tin-plated copper leadframe for improved reliability

Compatibility

Surface mount package (SOT-363)

Suitable for various electronic applications

Application Areas

Portable electronics

Power management circuits

Switching circuits

General-purpose amplification and switching

Product Lifecycle

This product is currently in production and available for purchase.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Compact and space-efficient SOT-363 package

Low on-resistance for improved energy efficiency

Wide operating temperature range for versatile applications

RoHS3 compliance for environmental friendliness

Reliable tin-plated copper leadframe construction