Manufacturer Part Number
DMN3053L-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
30V Drain to Source Voltage (Vdss)
±12V Gate to Source Voltage (Vgs)
45mOhm Maximum On-Resistance (Rds(on)) at 4A, 10V
4A Continuous Drain Current (Id) at 25°C
676pF Maximum Input Capacitance (Ciss) at 15V
760mW Maximum Power Dissipation at 25°C
2nC Maximum Gate Charge (Qg) at 10V
Product Advantages
Low on-resistance for efficient power handling
High current capability
Surface mount packaging for compact designs
Wide temperature range operation (-55°C to 150°C)
Key Technical Parameters
N-Channel MOSFET Technology
30V Drain to Source Voltage (Vdss)
±12V Gate to Source Voltage (Vgs)
45mOhm Maximum On-Resistance (Rds(on))
4A Continuous Drain Current (Id)
676pF Maximum Input Capacitance (Ciss)
760mW Maximum Power Dissipation
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for a wide range of electronic devices and circuits
Application Areas
Power management circuits
Motor control
Switching circuits
Industrial and consumer electronics
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High current handling capability
Low on-resistance for efficient power conversion
Wide temperature range operation
Compact surface mount package
RoHS3 compliance for use in modern electronics