DMN3033LSD-13 - Diodes Incorporated

Manufacturer Part Number

DMN3033LSD-13

Manufacturer

Diodes Incorporated

Introduction

Dual N-Channel MOSFET with Logic Level Gate

Product Features and Performance

2 N-Channel MOSFET in a single package

30V Drain-Source Voltage (Vdss)

20mOhm Maximum On-Resistance (Rds(on)) at 6.9A, 10V

9A Continuous Drain Current (Id) at 25°C

725pF Maximum Input Capacitance (Ciss) at 15V

13nC Maximum Gate Charge (Qg) at 10V

Logic Level Gate (Vgs(th) Max 2.1V at 250μA)

Operating Temperature Range: -55°C to 150°C

Product Advantages

Compact dual MOSFET design in a small 8-SOIC package

Low on-resistance for efficient power switching

Wide operating temperature range

Logic level gate for easy microcontroller interfacing

Key Technical Parameters

Drain-Source Voltage (Vdss): 30V

Continuous Drain Current (Id): 6.9A at 25°C

On-Resistance (Rds(on)): 20mOhm at 6.9A, 10V

Input Capacitance (Ciss): 725pF at 15V

Gate Charge (Qg): 13nC at 10V

Gate Threshold Voltage (Vgs(th)): 2.1V at 250μA

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with standard 8-SOIC footprint

Suitable for use in a wide range of electronic circuits and applications

Application Areas

Power management

Motor control

Switching circuits

General-purpose power switching

Product Lifecycle

This product is currently in production and available for purchase

No plans for discontinuation at this time

Replacements and upgrades may become available in the future as technology advances

Key Reasons to Choose This Product

Compact dual MOSFET design for space-constrained applications

Low on-resistance for efficient power switching

Wide operating temperature range for use in various environments

Logic level gate for easy microcontroller interfacing

RoHS3 compliance for use in environmentally-conscious applications

Availability and long-term support from Diodes Incorporated