Manufacturer Part Number
DMN3024LSD-13
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET transistor array in an 8-SOIC package
Product Features and Performance
30V Drain to Source Voltage
24mΩ maximum on-resistance at 7A, 10V
8A continuous drain current at 25°C
608pF maximum input capacitance at 15V
9nC maximum gate charge at 10V
Logic level gate with 3V maximum gate threshold voltage at 250μA
Product Advantages
Compact 8-SOIC package
Dual configuration for space-saving design
Low on-resistance for efficient power switching
Logic level gate for easy control
Key Technical Parameters
Drain to Source Voltage: 30V
On-resistance: 24mΩ max at 7A, 10V
Drain Current: 6.8A continuous at 25°C
Input Capacitance: 608pF max at 15V
Gate Charge: 12.9nC max at 10V
Gate Threshold Voltage: 3V max at 250μA
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for various power switching and control applications
Application Areas
Power management circuits
Motor control
Lighting control
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation or replacement plans known
Key Reasons to Choose This Product
Compact dual-channel design
Low on-resistance for efficient power switching
Logic level gate for easy control
Wide operating temperature range
RoHS3 compliance for environmental responsibility
DMN3023L-7Diodes IncorporatedMOSFET N-CH 30V 6.2A SOT23