Manufacturer Part Number
DMN3016LSS-13
Manufacturer
Diodes Incorporated
Introduction
The DMN3016LSS-13 is a single N-channel MOSFET transistor from Diodes Incorporated.
Product Features and Performance
30V drain-to-source voltage (Vdss)
12mΩ maximum on-resistance (Rds(on)) at 12A and 10V
3A continuous drain current (Id) at 25°C
1415pF maximum input capacitance (Ciss) at 15V
5W maximum power dissipation at 25°C
Product Advantages
Low on-resistance for efficient power switching
High continuous drain current for high-power applications
Small 8-SOIC package for compact designs
Key Technical Parameters
MOSFET technology
N-channel FET type
20V maximum gate-to-source voltage (Vgs)
5V maximum gate threshold voltage (Vgs(th)) at 250μA
Quality and Safety Features
RoHS3 compliant
Operating temperature range of -55°C to 150°C
Compatibility
Surface mount package (8-SOIC)
Tape and reel packaging
Application Areas
Power switching
Motor control
Amplifier circuits
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose
Excellent performance-to-size ratio
Reliable and durable MOSFET design
Suitable for a wide range of power switching applications
Competitively priced for cost-effective solutions
